Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi- modal dot height distributions

“N” structure for type-II superlattice photodetectors

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The Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells

The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700 ° C, which lead to an 18% improvement in current density from 4.9 mA cm -2 for as-grown sample to 5.8 mA cm -2 . ...

Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors

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High temperature rapid thermal annealing of phosphorous ion implanted InAs/ InP quantum dots

The effect of high temperature annealing of the InAs/ InP quantum dots QDs containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence PL intensity and reduced PL linewidth. The effect of high energy 450 keV...